Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP35CN10N G
Manufacturer Part Number | IPP35CN10N G |
---|---|
Future Part Number | FT-IPP35CN10N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPP35CN10N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 4V @ 29µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 58W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP35CN10N G Weight | Contact Us |
Replacement Part Number | IPP35CN10N G-FT |
IPP048N04NGXKSA1
Infineon Technologies
IPP048N06L G
Infineon Technologies
IPP04CN10NG
Infineon Technologies
IPP04N03LA
Infineon Technologies
IPP04N03LB G
Infineon Technologies
IPP050N06N G
Infineon Technologies
IPP051N15N5AKSA1
Infineon Technologies
IPP052N06L3GHKSA1
Infineon Technologies
IPP052NE7N3GHKSA1
Infineon Technologies
IPP054NE8NGHKSA2
Infineon Technologies
AT6010ALV-4AC
Microchip Technology
EX64-TQ100I
Microsemi Corporation
XC4005XL-3VQ100I
Xilinx Inc.
M1A3P600L-1FGG484I
Microsemi Corporation
LFE5UM-85F-7BG756I
Lattice Semiconductor Corporation
EP20K200EFC484-2XN
Intel
5SGXEA5K3F40I3LN
Intel
EP4CE6E22C8N
Intel
LFEC6E-5F484C
Lattice Semiconductor Corporation
5SGXEA3H2F35I3LN
Intel