Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP08CN10N G
Manufacturer Part Number | IPP08CN10N G |
---|---|
Future Part Number | FT-IPP08CN10N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPP08CN10N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 95A, 10V |
Vgs(th) (Max) @ Id | 4V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP08CN10N G Weight | Contact Us |
Replacement Part Number | IPP08CN10N G-FT |
IPP16CN10NGXKSA1
Infineon Technologies
IPP023N04NGXKSA1
Infineon Technologies
BUZ32 H
Infineon Technologies
IPP040N06NAKSA1
Infineon Technologies
IPP65R190E6XKSA1
Infineon Technologies
IPP80N08S2L07AKSA1
Infineon Technologies
SPP08P06PHXKSA1
Infineon Technologies
IPP093N06N3GXKSA1
Infineon Technologies
SPP15P10PLHXKSA1
Infineon Technologies
IPP65R125C7XKSA1
Infineon Technologies
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel