Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP06CNE8N G
Manufacturer Part Number | IPP06CNE8N G |
---|---|
Future Part Number | FT-IPP06CNE8N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPP06CNE8N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9240pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP06CNE8N G Weight | Contact Us |
Replacement Part Number | IPP06CNE8N G-FT |
IRF135B203
Infineon Technologies
IPP60R070CFD7XKSA1
Infineon Technologies
IPP034NE7N3GXKSA1
Infineon Technologies
IPP12CN10LGXKSA1
Infineon Technologies
IPP055N03LGXKSA1
Infineon Technologies
IPP114N12N3GXKSA1
Infineon Technologies
IPP60R090CFD7XKSA1
Infineon Technologies
IPP076N12N3GXKSA1
Infineon Technologies
IPP029N06NAKSA1
Infineon Technologies
IPP052N08N5AKSA1
Infineon Technologies