Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP06CNE8N G
Manufacturer Part Number | IPP06CNE8N G |
---|---|
Future Part Number | FT-IPP06CNE8N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPP06CNE8N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9240pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP06CNE8N G Weight | Contact Us |
Replacement Part Number | IPP06CNE8N G-FT |
IRF135B203
Infineon Technologies
IPP60R070CFD7XKSA1
Infineon Technologies
IPP034NE7N3GXKSA1
Infineon Technologies
IPP12CN10LGXKSA1
Infineon Technologies
IPP055N03LGXKSA1
Infineon Technologies
IPP114N12N3GXKSA1
Infineon Technologies
IPP60R090CFD7XKSA1
Infineon Technologies
IPP076N12N3GXKSA1
Infineon Technologies
IPP029N06NAKSA1
Infineon Technologies
IPP052N08N5AKSA1
Infineon Technologies
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel