Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPL65R190E6AUMA1
Manufacturer Part Number | IPL65R190E6AUMA1 |
---|---|
Future Part Number | FT-IPL65R190E6AUMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ E6 |
IPL65R190E6AUMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-VSON-4 |
Package / Case | 4-PowerTSFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPL65R190E6AUMA1 Weight | Contact Us |
Replacement Part Number | IPL65R190E6AUMA1-FT |
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