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Infineon Technologies IPI80P04P4L08AKSA1

Name: IPI80P04P4L08AKSA1
Brand: Infineon Technologies
SKU: IPI80P04P4L08AKSA1
Availability: InStock
Rating: 4.7 (316 reviews)

MFG Part Number: IPI80P04P4L08AKSA1

Available Quantity: 58480 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET P-CH TO262-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPI80P04P4L08AKSA1.pdf

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IPI80P04P4L08AKSA1 Specifications

Manufacturer Part Number	IPI80P04P4L08AKSA1
Future Part Number	FT-IPI80P04P4L08AKSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IPI80P04P4L08AKSA1 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.2 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Vgs (Max)	+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5430pF @ 25V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPI80P04P4L08AKSA1 Weight	Contact Us
Replacement Part Number	IPI80P04P4L08AKSA1-FT

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