Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI08CNE8N G
Manufacturer Part Number | IPI08CNE8N G |
---|---|
Future Part Number | FT-IPI08CNE8N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPI08CNE8N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 95A, 10V |
Vgs(th) (Max) @ Id | 4V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs | 99nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6690pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI08CNE8N G Weight | Contact Us |
Replacement Part Number | IPI08CNE8N G-FT |
IPW65R190CFDFKSA1
Infineon Technologies
IPW65R190E6FKSA1
Infineon Technologies
IPW65R280C6FKSA1
Infineon Technologies
IPW65R280E6FKSA1
Infineon Technologies
IPW65R310CFDFKSA1
Infineon Technologies
IPW65R420CFDFKSA1
Infineon Technologies
IPW65R660CFDFKSA1
Infineon Technologies
IPW80R280P7XKSA1
Infineon Technologies
IPW90R120C3FKSA1
Infineon Technologies
IPW90R1K0C3FKSA1
Infineon Technologies
M2GL025-1FG484I
Microsemi Corporation
APA600-BG456M
Microsemi Corporation
APA450-FG256
Microsemi Corporation
A3P400-1FG256
Microsemi Corporation
XC2V4000-4FFG1152I
Xilinx Inc.
LFE2M20E-6FN256I
Lattice Semiconductor Corporation
LCMXO2-1200UHC-4FTG256I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6MG132C
Lattice Semiconductor Corporation
EP3SE110F780C4L
Intel
10CL080YF780C6G
Intel