Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI06CN10N G
Manufacturer Part Number | IPI06CN10N G |
---|---|
Future Part Number | FT-IPI06CN10N G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPI06CN10N G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPI06CN10N G Weight | Contact Us |
Replacement Part Number | IPI06CN10N G-FT |
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