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Infineon Technologies IPI041N12N3GAKSA1

Name: IPI041N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI041N12N3GAKSA1
Price: 2.746736 USD
Availability: InStock
Rating: 4.6 (583 reviews)

MFG Part Number: IPI041N12N3GAKSA1

Available Quantity: 95190 Pieces

Reference Price: USD 2.746736

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 120V 120A TO262-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPI041N12N3GAKSA1.pdf

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IPI041N12N3GAKSA1 Specifications

Manufacturer Part Number	IPI041N12N3GAKSA1
Future Part Number	FT-IPI041N12N3GAKSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPI041N12N3GAKSA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPI041N12N3GAKSA1 Weight	Contact Us
Replacement Part Number	IPI041N12N3GAKSA1-FT

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