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Infineon Technologies IPG20N10S4L22AATMA1

MFG Part Number
IPG20N10S4L22AATMA1
Available Quantity
40650 Pieces
Reference Price
USD 0.644304
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET 2N-CH 100V 20A TDSON-8
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Arrays
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPG20N10S4L22AATMA1.pdf
IPG20N10S4L22AATMA1 Image

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IPG20N10S4L22AATMA1 Specifications

Manufacturer Part Number IPG20N10S4L22AATMA1
Future Part Number FT-IPG20N10S4L22AATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
IPG20N10S4L22AATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 22 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Power - Max 60W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPG20N10S4L22AATMA1 Weight Contact Us
Replacement Part Number IPG20N10S4L22AATMA1-FT

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