Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IPG20N10S4L22AATMA1
Manufacturer Part Number | IPG20N10S4L22AATMA1 |
---|---|
Future Part Number | FT-IPG20N10S4L22AATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPG20N10S4L22AATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
Power - Max | 60W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPG20N10S4L22AATMA1 Weight | Contact Us |
Replacement Part Number | IPG20N10S4L22AATMA1-FT |
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