Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD65R660CFDBTMA1
Manufacturer Part Number | IPD65R660CFDBTMA1 |
---|---|
Future Part Number | FT-IPD65R660CFDBTMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD65R660CFDBTMA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD65R660CFDBTMA1 Weight | Contact Us |
Replacement Part Number | IPD65R660CFDBTMA1-FT |
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