Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD65R380E6BTMA1
Manufacturer Part Number | IPD65R380E6BTMA1 |
---|---|
Future Part Number | FT-IPD65R380E6BTMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD65R380E6BTMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD65R380E6BTMA1 Weight | Contact Us |
Replacement Part Number | IPD65R380E6BTMA1-FT |
IPD30N06S2L23ATMA1
Infineon Technologies
IPD30N06S4L23ATMA1
Infineon Technologies
IPD30N08S222ATMA1
Infineon Technologies
IPD30N10S3L34ATMA1
Infineon Technologies
IPD320N20N3GATMA1
Infineon Technologies
IPD320N20N3GBTMA1
Infineon Technologies
IPD33CN10NGATMA1
Infineon Technologies
IPD33CN10NGBUMA1
Infineon Technologies
IPD400N06NGBTMA1
Infineon Technologies
IPD40N03S4L08ATMA1
Infineon Technologies
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel