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Infineon Technologies IPD60N10S4L12ATMA1

Name: IPD60N10S4L12ATMA1
Brand: Infineon Technologies
SKU: IPD60N10S4L12ATMA1
Price: 0.430584 USD
Availability: InStock
Rating: 4.9 (505 reviews)

MFG Part Number: IPD60N10S4L12ATMA1

Available Quantity: 15030 Pieces

Reference Price: USD 0.430584

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, HEXFET® MOSFET N-CH TO252-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPD60N10S4L12ATMA1.pdf

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IPD60N10S4L12ATMA1 Specifications

Manufacturer Part Number	IPD60N10S4L12ATMA1
Future Part Number	FT-IPD60N10S4L12ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, HEXFET®
IPD60N10S4L12ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3170pF @ 25V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPD60N10S4L12ATMA1 Weight	Contact Us
Replacement Part Number	IPD60N10S4L12ATMA1-FT

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