Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD50R800CEBTMA1
Manufacturer Part Number | IPD50R800CEBTMA1 |
---|---|
Future Part Number | FT-IPD50R800CEBTMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD50R800CEBTMA1 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 1.5A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
FET Feature | Super Junction |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD50R800CEBTMA1 Weight | Contact Us |
Replacement Part Number | IPD50R800CEBTMA1-FT |
IPD096N08N3GBTMA1
Infineon Technologies
IPD09N03LA G
Infineon Technologies
IPD09N03LB G
Infineon Technologies
IPD100N06S403ATMA1
Infineon Technologies
IPD100N06S403ATMA2
Infineon Technologies
IPD105N03LGATMA1
Infineon Technologies
IPD105N04LGBTMA1
Infineon Technologies
IPD10N03LA
Infineon Technologies
IPD10N03LA G
Infineon Technologies
IPD110N12N3GATMA1
Infineon Technologies
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel