Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD30N03S2L07ATMA1
Manufacturer Part Number | IPD30N03S2L07ATMA1 |
---|---|
Future Part Number | FT-IPD30N03S2L07ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPD30N03S2L07ATMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD30N03S2L07ATMA1 Weight | Contact Us |
Replacement Part Number | IPD30N03S2L07ATMA1-FT |
AUIRFR5305TRL
Infineon Technologies
IPD038N06N3GATMA1
Infineon Technologies
IPD068N10N3GATMA1
Infineon Technologies
IPD25CN10NGATMA1
Infineon Technologies
IPD30N03S4L14ATMA1
Infineon Technologies
IPD30N06S4L23ATMA2
Infineon Technologies
IPD35N10S3L26ATMA1
Infineon Technologies
IPD50N06S4L12ATMA2
Infineon Technologies
IPD60R1K5CEAUMA1
Infineon Technologies
IPD60R3K3C6ATMA1
Infineon Technologies
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel