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Infineon Technologies IPD082N10N3GBTMA1

Name: IPD082N10N3GBTMA1
Brand: Infineon Technologies
SKU: IPD082N10N3GBTMA1
Availability: InStock
Rating: 4.7 (441 reviews)

MFG Part Number: IPD082N10N3GBTMA1

Available Quantity: 35240 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 80A TO252-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPD082N10N3GBTMA1.pdf

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IPD082N10N3GBTMA1 Specifications

Manufacturer Part Number	IPD082N10N3GBTMA1
Future Part Number	FT-IPD082N10N3GBTMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPD082N10N3GBTMA1 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPD082N10N3GBTMA1 Weight	Contact Us
Replacement Part Number	IPD082N10N3GBTMA1-FT

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