Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD046N08N5ATMA1
Manufacturer Part Number | IPD046N08N5ATMA1 |
---|---|
Future Part Number | FT-IPD046N08N5ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPD046N08N5ATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 65µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD046N08N5ATMA1 Weight | Contact Us |
Replacement Part Number | IPD046N08N5ATMA1-FT |
IPB35N12S3L26ATMA1
Infineon Technologies
IPB50N12S3L15ATMA1
Infineon Technologies
IPB65R110CFDATMA2
Infineon Technologies
IPB65R150CFDATMA2
Infineon Technologies
IPB65R190CFDATMA2
Infineon Technologies
IPB65R310CFDATMA2
Infineon Technologies
IPB70N12S311ATMA1
Infineon Technologies
IPB70N12S3L12ATMA1
Infineon Technologies
IPB80N04S2H4ATMA2
Infineon Technologies
IPB80N07S405ATMA1
Infineon Technologies
A3PN015-1QNG68I
Microsemi Corporation
A1415A-PQ100I
Microsemi Corporation
M2GL025S-1VF400I
Microsemi Corporation
A10V20B-PL68C
Microsemi Corporation
EP4S100G3F45I3N
Intel
XC4028XL-09HQ208C
Xilinx Inc.
XC2VP2-6FFG672C
Xilinx Inc.
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP3SE80F780C4
Intel
EPF10K30AQC208-1N
Intel