Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB90N06S4L04ATMA1
Manufacturer Part Number | IPB90N06S4L04ATMA1 |
---|---|
Future Part Number | FT-IPB90N06S4L04ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB90N06S4L04ATMA1 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB90N06S4L04ATMA1 Weight | Contact Us |
Replacement Part Number | IPB90N06S4L04ATMA1-FT |
IPB60R520CPATMA1
Infineon Technologies
IPB60R600C6ATMA1
Infineon Technologies
IPB60R600CPATMA1
Infineon Technologies
IPB60R600P6ATMA1
Infineon Technologies
IPB60R950C6ATMA1
Infineon Technologies
IPB64N25S320ATMA1
Infineon Technologies
IPB65R045C7ATMA1
Infineon Technologies
IPB65R045C7ATMA2
Infineon Technologies
IPB65R065C7ATMA1
Infineon Technologies
IPB65R095C7ATMA1
Infineon Technologies