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Infineon Technologies IPB65R660CFDAATMA1

Name: IPB65R660CFDAATMA1
Brand: Infineon Technologies
SKU: IPB65R660CFDAATMA1
Price: 0.906088 USD
Availability: InStock
Rating: 4.7 (487 reviews)

MFG Part Number: IPB65R660CFDAATMA1

Available Quantity: 17230 Pieces

Reference Price: USD 0.906088

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, CoolMOS™ MOSFET N-CH TO263-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB65R660CFDAATMA1.pdf

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IPB65R660CFDAATMA1 Specifications

Manufacturer Part Number	IPB65R660CFDAATMA1
Future Part Number	FT-IPB65R660CFDAATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, CoolMOS™
IPB65R660CFDAATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	660 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	543pF @ 100V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB65R660CFDAATMA1 Weight	Contact Us
Replacement Part Number	IPB65R660CFDAATMA1-FT

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