Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB60R299CPATMA1
Manufacturer Part Number | IPB60R299CPATMA1 |
---|---|
Future Part Number | FT-IPB60R299CPATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPB60R299CPATMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 96W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB60R299CPATMA1 Weight | Contact Us |
Replacement Part Number | IPB60R299CPATMA1-FT |
IPB09N03LA G
Infineon Technologies
IPB09N03LAT
Infineon Technologies
IPB100N04S204ATMA1
Infineon Technologies
IPB100N04S2L03ATMA1
Infineon Technologies
IPB100N04S2L03ATMA2
Infineon Technologies
IPB100N06S205ATMA1
Infineon Technologies
IPB100N06S2L05ATMA1
Infineon Technologies
IPB100N06S2L05ATMA2
Infineon Technologies
IPB100N06S3-03
Infineon Technologies
IPB100N06S3-04
Infineon Technologies