Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB60R230P6ATMA1
Manufacturer Part Number | IPB60R230P6ATMA1 |
---|---|
Future Part Number | FT-IPB60R230P6ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ P6 |
IPB60R230P6ATMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 230 mOhm @ 6.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 530µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 126W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB60R230P6ATMA1 Weight | Contact Us |
Replacement Part Number | IPB60R230P6ATMA1-FT |
IPB08CNE8N G
Infineon Technologies
IPB090N06N3GATMA1
Infineon Technologies
IPB093N04LGATMA1
Infineon Technologies
IPB096N03LGATMA1
Infineon Technologies
IPB097N08N3 G
Infineon Technologies
IPB09N03LA
Infineon Technologies
IPB09N03LA G
Infineon Technologies
IPB09N03LAT
Infineon Technologies
IPB100N04S204ATMA1
Infineon Technologies
IPB100N04S2L03ATMA1
Infineon Technologies
A1020B-2VQ80I
Microsemi Corporation
XC7A50T-3FGG484E
Xilinx Inc.
5SGXMB6R2F40I2N
Intel
5SGSMD3E3H29C2N
Intel
EP2AGX125DF25I3N
Intel
XC5VLX110-3FFG1760C
Xilinx Inc.
LCMXO2-7000ZE-1FTG256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG132C
Lattice Semiconductor Corporation
5AGXBA7D4F31I5N
Intel
EP4SGX230HF35I4N
Intel