Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB45N04S4L08ATMA1
Manufacturer Part Number | IPB45N04S4L08ATMA1 |
---|---|
Future Part Number | FT-IPB45N04S4L08ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB45N04S4L08ATMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.6 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 17µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB45N04S4L08ATMA1 Weight | Contact Us |
Replacement Part Number | IPB45N04S4L08ATMA1-FT |
IPB04N03LAT
Infineon Technologies
IPB04N03LB
Infineon Technologies
IPB04N03LB G
Infineon Technologies
IPB050N06NGATMA1
Infineon Technologies
IPB052N04NGATMA1
Infineon Technologies
IPB055N03LGATMA1
Infineon Technologies
IPB057N06NATMA1
Infineon Technologies
IPB05CN10N G
Infineon Technologies
IPB05N03LA
Infineon Technologies
IPB05N03LA G
Infineon Technologies
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel