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Infineon Technologies IPB160N04S2L03ATMA2

Name: IPB160N04S2L03ATMA2
Brand: Infineon Technologies
SKU: IPB160N04S2L03ATMA2
Availability: InStock
Rating: 4.5 (542 reviews)

MFG Part Number: IPB160N04S2L03ATMA2

Available Quantity: 47000 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET N-CH TO262-7

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB160N04S2L03ATMA2.pdf

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IPB160N04S2L03ATMA2 Specifications

Manufacturer Part Number	IPB160N04S2L03ATMA2
Future Part Number	FT-IPB160N04S2L03ATMA2
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IPB160N04S2L03ATMA2 Status (Lifecycle)	In Stock
Part Status	Discontinued at Future Semiconductor
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 15V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-3
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB160N04S2L03ATMA2 Weight	Contact Us
Replacement Part Number	IPB160N04S2L03ATMA2-FT

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