Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB042N10N3GE8187ATMA1
Manufacturer Part Number | IPB042N10N3GE8187ATMA1 |
---|---|
Future Part Number | FT-IPB042N10N3GE8187ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB042N10N3GE8187ATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB042N10N3GE8187ATMA1 Weight | Contact Us |
Replacement Part Number | IPB042N10N3GE8187ATMA1-FT |
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