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Infineon Technologies IPB039N10N3GE8187ATMA1

Name: IPB039N10N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB039N10N3GE8187ATMA1
Price: 1.338936 USD
Availability: InStock
Rating: 4.9 (433 reviews)

MFG Part Number: IPB039N10N3GE8187ATMA1

Available Quantity: 94680 Pieces

Reference Price: USD 1.338936

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 160A TO263-7

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB039N10N3GE8187ATMA1.pdf

IPB039N10N3GE8187ATMA1 Specifications

Manufacturer Part Number	IPB039N10N3GE8187ATMA1
Future Part Number	FT-IPB039N10N3GE8187ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPB039N10N3GE8187ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB039N10N3GE8187ATMA1 Weight	Contact Us
Replacement Part Number	IPB039N10N3GE8187ATMA1-FT

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