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Infineon Technologies IPB025N10N3GE8187ATMA1

Name: IPB025N10N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB025N10N3GE8187ATMA1
Price: 2.61172 USD
Availability: InStock
Rating: 4.9 (139 reviews)

MFG Part Number: IPB025N10N3GE8187ATMA1

Available Quantity: 64980 Pieces

Reference Price: USD 2.61172

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 180A TO263-7

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB025N10N3GE8187ATMA1.pdf

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IPB025N10N3GE8187ATMA1 Specifications

Manufacturer Part Number	IPB025N10N3GE8187ATMA1
Future Part Number	FT-IPB025N10N3GE8187ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPB025N10N3GE8187ATMA1 Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	180A
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14800pF @ 50V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB025N10N3GE8187ATMA1 Weight	Contact Us
Replacement Part Number	IPB025N10N3GE8187ATMA1-FT

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