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Infineon Technologies IPA65R190E6XKSA1

MFG Part Number
IPA65R190E6XKSA1
Available Quantity
73880 Pieces
Reference Price
USD 1.660048
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
CoolMOS™ MOSFET N-CH 650V 20.2A TO220
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPA65R190E6XKSA1.pdf
IPA65R190E6XKSA1 Image

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IPA65R190E6XKSA1 Specifications

Manufacturer Part Number IPA65R190E6XKSA1
Future Part Number FT-IPA65R190E6XKSA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series CoolMOS™
IPA65R190E6XKSA1 Status (Lifecycle) In Stock
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPA65R190E6XKSA1 Weight Contact Us
Replacement Part Number IPA65R190E6XKSA1-FT

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