Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMH24T110
Manufacturer Part Number | IMH24T110 |
---|---|
Future Part Number | FT-IMH24T110 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IMH24T110 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 2 NPN Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 50mA, 2.5mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IMH24T110 Weight | Contact Us |
Replacement Part Number | IMH24T110-FT |
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