Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMD1AT108
Manufacturer Part Number | IMD1AT108 |
---|---|
Future Part Number | FT-IMD1AT108 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IMD1AT108 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IMD1AT108 Weight | Contact Us |
Replacement Part Number | IMD1AT108-FT |
XN0431400L
Panasonic Electronic Components
XN0431500L
Panasonic Electronic Components
XN0431600L
Panasonic Electronic Components
XN0432200L
Panasonic Electronic Components
XN0438100L
Panasonic Electronic Components
XN04A8800L
Panasonic Electronic Components
XN0621100L
Panasonic Electronic Components
XN0621300L
Panasonic Electronic Components
XN0621500L
Panasonic Electronic Components
XN0621600L
Panasonic Electronic Components
XC3S1400AN-5FGG484C
Xilinx Inc.
A42MX36-BG272I
Microsemi Corporation
LCMXO640C-3FTN256I
Lattice Semiconductor Corporation
A3PN125-1VQG100
Microsemi Corporation
EP20K200EFC484-2N
Intel
10M16DCF256I6G
Intel
5SEEBH40I4N
Intel
EP4SGX530KH40C3N
Intel
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LFE2M50SE-7FN900C
Lattice Semiconductor Corporation