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IGT60R190D1SATMA1 Image

Infineon Technologies IGT60R190D1SATMA1

MFG Part Number
IGT60R190D1SATMA1
Available Quantity
18040 Pieces
Reference Price
USD 7.017928
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
CoolGaN™ IC GAN FET 600V 23A 8HSOF
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IGT60R190D1SATMA1.pdf
IGT60R190D1SATMA1 Image

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IGT60R190D1SATMA1 Specifications

Manufacturer Part Number IGT60R190D1SATMA1
Future Part Number FT-IGT60R190D1SATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series CoolGaN™
IGT60R190D1SATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
FET Feature -
Power Dissipation (Max) 55.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IGT60R190D1SATMA1 Weight Contact Us
Replacement Part Number IGT60R190D1SATMA1-FT

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