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Infineon Technologies IGT60R190D1SATMA1

Name: IGT60R190D1SATMA1
Brand: Infineon Technologies
SKU: IGT60R190D1SATMA1
Price: 7.017928 USD
Availability: InStock
Rating: 4.7 (415 reviews)

MFG Part Number: IGT60R190D1SATMA1

Available Quantity: 18040 Pieces

Reference Price: USD 7.017928

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: CoolGaN™ IC GAN FET 600V 23A 8HSOF

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IGT60R190D1SATMA1.pdf

IGT60R190D1SATMA1 Specifications

Manufacturer Part Number	IGT60R190D1SATMA1
Future Part Number	FT-IGT60R190D1SATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	CoolGaN™
IGT60R190D1SATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	157pF @ 400V
FET Feature	-
Power Dissipation (Max)	55.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IGT60R190D1SATMA1 Weight	Contact Us
Replacement Part Number	IGT60R190D1SATMA1-FT

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