Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IGT60R190D1SATMA1
Manufacturer Part Number | IGT60R190D1SATMA1 |
---|---|
Future Part Number | FT-IGT60R190D1SATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolGaN™ |
IGT60R190D1SATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1.6V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | -10V |
Input Capacitance (Ciss) (Max) @ Vds | 157pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 55.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-HSOF-8-3 |
Package / Case | 8-PowerSFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IGT60R190D1SATMA1 Weight | Contact Us |
Replacement Part Number | IGT60R190D1SATMA1-FT |
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