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Infineon Technologies IGT60R070D1ATMA1

Name: IGT60R070D1ATMA1
Brand: Infineon Technologies
SKU: IGT60R070D1ATMA1
Price: 12.959184 USD
Availability: InStock
Rating: 4.9 (580 reviews)

MFG Part Number: IGT60R070D1ATMA1

Available Quantity: 65010 Pieces

Reference Price: USD 12.959184

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: CoolGaN™ IC GAN FET 600V 60A 8HSOF

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IGT60R070D1ATMA1.pdf

IGT60R070D1ATMA1 Specifications

Manufacturer Part Number	IGT60R070D1ATMA1
Future Part Number	FT-IGT60R070D1ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	CoolGaN™
IGT60R070D1ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 400V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IGT60R070D1ATMA1 Weight	Contact Us
Replacement Part Number	IGT60R070D1ATMA1-FT

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