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Infineon Technologies IAUS165N08S5N029ATMA1

Name: IAUS165N08S5N029ATMA1
Brand: Infineon Technologies
SKU: IAUS165N08S5N029ATMA1
Price: 1.748336 USD
Availability: InStock
Rating: 4.8 (521 reviews)

MFG Part Number: IAUS165N08S5N029ATMA1

Available Quantity: 80930 Pieces

Reference Price: USD 1.748336

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET N-CH 80V 660A PG-HSOG-8-1

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IAUS165N08S5N029ATMA1.pdf

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IAUS165N08S5N029ATMA1 Specifications

Manufacturer Part Number	IAUS165N08S5N029ATMA1
Future Part Number	FT-IAUS165N08S5N029ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IAUS165N08S5N029ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6370pF @ 40V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSMD, Gull Wing
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IAUS165N08S5N029ATMA1 Weight	Contact Us
Replacement Part Number	IAUS165N08S5N029ATMA1-FT

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