Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / HSM835GE3/TR13
Manufacturer Part Number | HSM835GE3/TR13 |
---|---|
Future Part Number | FT-HSM835GE3/TR13 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HSM835GE3/TR13 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 35V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 620mV @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 250µA @ 35V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-215AB, SMC Gull Wing |
Supplier Device Package | DO-215AB |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HSM835GE3/TR13 Weight | Contact Us |
Replacement Part Number | HSM835GE3/TR13-FT |
RB751V-40 RRG
Taiwan Semiconductor Corporation
STPS30S45CW
STMicroelectronics
BAS21TMQ-13
Diodes Incorporated
CMC02(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG02(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG03(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMH01(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMH02A(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMH04(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMH05(TE12L,Q,M)
Toshiba Semiconductor and Storage