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Toshiba Semiconductor and Storage HN3C10FUTE85LF

MFG Part Number
HN3C10FUTE85LF
Available Quantity
18040 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
- RF TRANS 2 NPN 12V 7GHZ US6
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - Bipolar (BJT) - RF
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
HN3C10FUTE85LF.pdf
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HN3C10FUTE85LF Specifications

Manufacturer Part Number HN3C10FUTE85LF
Future Part Number FT-HN3C10FUTE85LF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
HN3C10FUTE85LF Status (Lifecycle) In Stock
Part Status Active
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
HN3C10FUTE85LF Weight Contact Us
Replacement Part Number HN3C10FUTE85LF-FT

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