Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / HN3C10FUTE85LF
Manufacturer Part Number | HN3C10FUTE85LF |
---|---|
Future Part Number | FT-HN3C10FUTE85LF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HN3C10FUTE85LF Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HN3C10FUTE85LF Weight | Contact Us |
Replacement Part Number | HN3C10FUTE85LF-FT |
2SC4226-T1-A
CEL
2SC4227-A
CEL
2SC4227-T1-A
CEL
2SC4228-A
CEL
2SC4228-T1-A
CEL
BF799WE6327BTSA1
Infineon Technologies
BF799WH6327XTSA1
Infineon Technologies
BFR 181W E6327
Infineon Technologies
BFR 182W E6327
Infineon Technologies
BFR 183W E6327
Infineon Technologies
XC3S50A-4TQ144C
Xilinx Inc.
XC4013E-3PQ208I
Xilinx Inc.
A3PE600-1FG484
Microsemi Corporation
A3P030-1QNG48I
Microsemi Corporation
M7AFS600-2FG256I
Microsemi Corporation
EP1C3T100I7N
Intel
5SGXEA4K3F35I3LN
Intel
XC4VLX25-10FFG676C
Xilinx Inc.
10AX066K3F40I2LG
Intel
EP1K100QC208-1N
Intel