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ON Semiconductor HGT1S10N120BNST

MFG Part Number
HGT1S10N120BNST
Available Quantity
95280 Pieces
Reference Price
USD 1.442368
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
ON Semiconductor
Brief Description
- IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - IGBTs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
HGT1S10N120BNST.pdf
HGT1S10N120BNST Image

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HGT1S10N120BNST Specifications

Manufacturer Part Number HGT1S10N120BNST
Future Part Number FT-HGT1S10N120BNST
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
HGT1S10N120BNST Status (Lifecycle) In Stock
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
HGT1S10N120BNST Weight Contact Us
Replacement Part Number HGT1S10N120BNST-FT

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