Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / HFA3127R96
Manufacturer Part Number | HFA3127R96 |
---|---|
Future Part Number | FT-HFA3127R96 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HFA3127R96 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 5 NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
Gain | - |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max) | 65mA |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 16-VFQFN Exposed Pad |
Supplier Device Package | 16-QFN (3x3) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HFA3127R96 Weight | Contact Us |
Replacement Part Number | HFA3127R96-FT |
SD1726
STMicroelectronics
SD1731
STMicroelectronics
SD1275
STMicroelectronics
SD1274
STMicroelectronics
BFU725F/N1,115
NXP USA Inc.
BFG10W/X,115
NXP USA Inc.
BFG25AW/X,115
NXP USA Inc.
BFG424F,115
NXP USA Inc.
BFG520W,115
NXP USA Inc.
BFG520W/X,115
NXP USA Inc.
XC3S50A-4TQ144C
Xilinx Inc.
XC4013E-3PQ208I
Xilinx Inc.
A3PE600-1FG484
Microsemi Corporation
A3P030-1QNG48I
Microsemi Corporation
M7AFS600-2FG256I
Microsemi Corporation
EP1C3T100I7N
Intel
5SGXEA4K3F35I3LN
Intel
XC4VLX25-10FFG676C
Xilinx Inc.
10AX066K3F40I2LG
Intel
EP1K100QC208-1N
Intel