Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / HER601G B0G
Manufacturer Part Number | HER601G B0G |
---|---|
Future Part Number | FT-HER601G B0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HER601G B0G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 6A |
Voltage - Forward (Vf) (Max) @ If | 1V @ 6A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50ns |
Current - Reverse Leakage @ Vr | 10µA @ 50V |
Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | R6, Axial |
Supplier Device Package | R-6 |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HER601G B0G Weight | Contact Us |
Replacement Part Number | HER601G B0G-FT |
EU 1Z
Sanken
EU 1ZV
Sanken
EU 1ZV0
Sanken
EU 1ZV1
Sanken
EU 2
Sanken
EU 2A
Sanken
EU 2AV
Sanken
EU 2AV0
Sanken
EU 2V
Sanken
EU 2V0
Sanken
XC3SD3400A-4CS484C
Xilinx Inc.
XC2S50-6FG256C
Xilinx Inc.
M1A3P600-2FG484
Microsemi Corporation
A3P600-1FGG256
Microsemi Corporation
EP4SE360H29I3N
Intel
XC7K410T-3FFG900E
Xilinx Inc.
A42MX16-1TQG176M
Microsemi Corporation
LFE3-70EA-6FN672C
Lattice Semiconductor Corporation
EP2SGX60DF780C5N
Intel
EP1S40F1020I6N
Intel