Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / HER307GT-G
Manufacturer Part Number | HER307GT-G |
---|---|
Future Part Number | FT-HER307GT-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HER307GT-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 800V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 5µA @ 800V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | DO-201AA, DO-27, Axial |
Supplier Device Package | DO-27 |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HER307GT-G Weight | Contact Us |
Replacement Part Number | HER307GT-G-FT |
EU 1
Sanken
EU 1V
Sanken
EU 1V0
Sanken
EU 1V1
Sanken
EU 1Z
Sanken
EU 1ZV
Sanken
EU 1ZV0
Sanken
EU 1ZV1
Sanken
EU 2
Sanken
EU 2A
Sanken
EP20K30ETC144-2
Intel
XC2V6000-6FFG1517C
Xilinx Inc.
XC4020XL-2PQ208C
Xilinx Inc.
M1A3P400-FG484
Microsemi Corporation
A3P250-FGG256T
Microsemi Corporation
A3PE600-1PQG208I
Microsemi Corporation
5SGXMB5R3F40I4N
Intel
5SGXMBBR3H43C2LN
Intel
LCMXO3LF-2100E-6MG121I
Lattice Semiconductor Corporation
10AX066N2F40I1SG
Intel