Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / HCT7000M
Manufacturer Part Number | HCT7000M |
---|---|
Future Part Number | FT-HCT7000M |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HCT7000M Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±40V |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-SMD |
Package / Case | 3-SMD, No Lead |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HCT7000M Weight | Contact Us |
Replacement Part Number | HCT7000M-FT |
IRF9530L
Vishay Siliconix
IRF9540L
Vishay Siliconix
IRF9610L
Vishay Siliconix
IRF9620L
Vishay Siliconix
IRF9630L
Vishay Siliconix
IRF9640L
Vishay Siliconix
IRF9Z14L
Vishay Siliconix
IRFBC20L
Vishay Siliconix
IRFBC20LPBF
Vishay Siliconix
IRFBC30AL
Vishay Siliconix
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel