Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HBDM60V600W-7
Manufacturer Part Number | HBDM60V600W-7 |
---|---|
Future Part Number | FT-HBDM60V600W-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HBDM60V600W-7 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 500mA, 600mA |
Voltage - Collector Emitter Breakdown (Max) | 65V, 60V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V / 100 @ 150mA, 10V |
Power - Max | 200mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HBDM60V600W-7 Weight | Contact Us |
Replacement Part Number | HBDM60V600W-7-FT |
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