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Toshiba Semiconductor and Storage GT60N321(Q)

MFG Part Number
GT60N321(Q)
Available Quantity
27350 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
- IGBT 1000V 60A 170W TO3P LH
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - IGBTs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
GT60N321(Q).pdf
GT60N321(Q) Image

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GT60N321(Q) Specifications

Manufacturer Part Number GT60N321(Q)
Future Part Number FT-GT60N321(Q)
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
GT60N321(Q) Status (Lifecycle) In Stock
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 170W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 330ns/700ns
Test Condition -
Reverse Recovery Time (trr) 2.5µs
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
GT60N321(Q) Weight Contact Us
Replacement Part Number GT60N321(Q)-FT

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