Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP1M009A090N
Manufacturer Part Number | GP1M009A090N |
---|---|
Future Part Number | FT-GP1M009A090N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GP1M009A090N Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 312W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GP1M009A090N Weight | Contact Us |
Replacement Part Number | GP1M009A090N-FT |
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