Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP1M009A090H
Manufacturer Part Number | GP1M009A090H |
---|---|
Future Part Number | FT-GP1M009A090H |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GP1M009A090H Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 290W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GP1M009A090H Weight | Contact Us |
Replacement Part Number | GP1M009A090H-FT |
IRFU9120NPBF
Infineon Technologies
IRFU9N20D
Infineon Technologies
IRLU2703PBF
Infineon Technologies
IRLU3705ZPBF
Infineon Technologies
IRLU3915PBF
Infineon Technologies
IRLU7843PBF
Infineon Technologies
IRLU8256PBF
Infineon Technologies
IRLU8259PBF
Infineon Technologies
IRLU8726PBF
Infineon Technologies
GP1M003A040PG
Global Power Technologies Group