Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / GDP30S120B
Manufacturer Part Number | GDP30S120B |
---|---|
Future Part Number | FT-GDP30S120B |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Amp+™ |
GDP30S120B Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 30A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 30A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 100µA @ 1200V |
Capacitance @ Vr, F | 1790pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 135°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GDP30S120B Weight | Contact Us |
Replacement Part Number | GDP30S120B-FT |
DPG15I300PA
IXYS
DPG30I300PA
IXYS
DSA15I45PA
IXYS
DSA30I100PA
IXYS
DSA30I150PA
IXYS
DSB20I15PA
IXYS
DSEP15-06A
IXYS
DSEP15-06B
IXYS
DSEP29-06B
IXYS
DSEP29-12A
IXYS
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel