Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ610TB
Manufacturer Part Number | GBJ610TB |
---|---|
Future Part Number | FT-GBJ610TB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ610TB Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1kV |
Current - Average Rectified (Io) | 6A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 6A |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-ESIP |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ610TB Weight | Contact Us |
Replacement Part Number | GBJ610TB-FT |
MBS4HRCG
Taiwan Semiconductor Corporation
RMB4S RCG
Taiwan Semiconductor Corporation
RMB4SHRCG
Taiwan Semiconductor Corporation
RMB6SHRCG
Taiwan Semiconductor Corporation
MBS10HRCG
Taiwan Semiconductor Corporation
MBS2 RCG
Taiwan Semiconductor Corporation
MBS6 RCG
Taiwan Semiconductor Corporation
MBS6HRCG
Taiwan Semiconductor Corporation
MBS8HRCG
Taiwan Semiconductor Corporation
GBU607 D2G
Taiwan Semiconductor Corporation
XC4010XL-3TQ144I
Xilinx Inc.
XCV200E-8FG456C
Xilinx Inc.
XC7S75-2FGGA484C
Xilinx Inc.
M1AFS600-1FGG484I
Microsemi Corporation
EP3SL50F484I4
Intel
5SGXEA3K3F40C3N
Intel
LFXP3C-3Q208C
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG256I
Lattice Semiconductor Corporation
5AGXMB7G6F35C6N
Intel
EP3SL70F780I3
Intel