Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ3508TB
Manufacturer Part Number | GBJ3508TB |
---|---|
Future Part Number | FT-GBJ3508TB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ3508TB Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 800V |
Current - Average Rectified (Io) | 35A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 35A |
Current - Reverse Leakage @ Vr | 5µA @ 800V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-ESIP |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ3508TB Weight | Contact Us |
Replacement Part Number | GBJ3508TB-FT |
GBU803 D2G
Taiwan Semiconductor Corporation
GBU803HD2G
Taiwan Semiconductor Corporation
GBU804 D2G
Taiwan Semiconductor Corporation
GBU804HD2G
Taiwan Semiconductor Corporation
GBU805HD2G
Taiwan Semiconductor Corporation
GBU806HD2G
Taiwan Semiconductor Corporation
GBU807HD2G
Taiwan Semiconductor Corporation
GBU1001 D2G
Taiwan Semiconductor Corporation
GBU1001HD2G
Taiwan Semiconductor Corporation
GBU1002 D2G
Taiwan Semiconductor Corporation
XC3S500E-5FTG256C
Xilinx Inc.
M1A3P1000-FG256I
Microsemi Corporation
M1A3P1000-PQ208I
Microsemi Corporation
EP3SE260F1517I3
Intel
XC2VP50-5FFG1152I
Xilinx Inc.
LFEC10E-3FN484C
Lattice Semiconductor Corporation
LFE2M35SE-6FN484C
Lattice Semiconductor Corporation
LCMXO640E-4B256C
Lattice Semiconductor Corporation
10AX090U4F45E3LG
Intel
EP4SGX180DF29C2X
Intel