Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ2510-G
Manufacturer Part Number | GBJ2510-G |
---|---|
Future Part Number | FT-GBJ2510-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ2510-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1kV |
Current - Average Rectified (Io) | 25A |
Voltage - Forward (Vf) (Max) @ If | 1V @ 12.5A |
Current - Reverse Leakage @ Vr | 10µA @ 1000V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-SIP, GBJ |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ2510-G Weight | Contact Us |
Replacement Part Number | GBJ2510-G-FT |
KBJ602G
Diodes Incorporated
SBR05M60BLP-7
Diodes Incorporated
SBR05M100BLP-7
Diodes Incorporated
SDM1L30BLP-13
Diodes Incorporated
SBR2A40BLP-13
Diodes Incorporated
LBS10-13
Diodes Incorporated
HDS10M-13
Diodes Incorporated
HDS20M-13
Diodes Incorporated
MSB10M-13
Diodes Incorporated
DFBR030U3LP-13
Diodes Incorporated
XC3S500E-5FTG256C
Xilinx Inc.
M1A3P1000-FG256I
Microsemi Corporation
M1A3P1000-PQ208I
Microsemi Corporation
EP3SE260F1517I3
Intel
XC2VP50-5FFG1152I
Xilinx Inc.
LFEC10E-3FN484C
Lattice Semiconductor Corporation
LFE2M35SE-6FN484C
Lattice Semiconductor Corporation
LCMXO640E-4B256C
Lattice Semiconductor Corporation
10AX090U4F45E3LG
Intel
EP4SGX180DF29C2X
Intel