Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ2506TB
Manufacturer Part Number | GBJ2506TB |
---|---|
Future Part Number | FT-GBJ2506TB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ2506TB Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 600V |
Current - Average Rectified (Io) | 25A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 12.5A |
Current - Reverse Leakage @ Vr | 10µA @ 600V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-ESIP |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ2506TB Weight | Contact Us |
Replacement Part Number | GBJ2506TB-FT |
MBS4 RCG
Taiwan Semiconductor Corporation
RMB2S RCG
Taiwan Semiconductor Corporation
MBS2HRCG
Taiwan Semiconductor Corporation
MBS4HRCG
Taiwan Semiconductor Corporation
RMB4S RCG
Taiwan Semiconductor Corporation
RMB4SHRCG
Taiwan Semiconductor Corporation
RMB6SHRCG
Taiwan Semiconductor Corporation
MBS10HRCG
Taiwan Semiconductor Corporation
MBS2 RCG
Taiwan Semiconductor Corporation
MBS6 RCG
Taiwan Semiconductor Corporation
LCMXO2280C-5T100C
Lattice Semiconductor Corporation
XC7A75T-2FGG676C
Xilinx Inc.
XC4005E-1PQ208C
Xilinx Inc.
A42MX16-3PQ208I
Microsemi Corporation
A54SX72A-PQ208
Microsemi Corporation
A3P030-VQ100
Microsemi Corporation
10CL016ZU484I8G
Intel
10AX027H4F34I3SG
Intel
5SGXEABK1H40I2N
Intel
LFE3-150EA-8FN1156ITW
Lattice Semiconductor Corporation