Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ2010TB
Manufacturer Part Number | GBJ2010TB |
---|---|
Future Part Number | FT-GBJ2010TB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ2010TB Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1kV |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 20A |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-ESIP |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ2010TB Weight | Contact Us |
Replacement Part Number | GBJ2010TB-FT |
MBS8 RCG
Taiwan Semiconductor Corporation
MBS10 RCG
Taiwan Semiconductor Corporation
RMB6S RCG
Taiwan Semiconductor Corporation
MBS4 RCG
Taiwan Semiconductor Corporation
RMB2S RCG
Taiwan Semiconductor Corporation
MBS2HRCG
Taiwan Semiconductor Corporation
MBS4HRCG
Taiwan Semiconductor Corporation
RMB4S RCG
Taiwan Semiconductor Corporation
RMB4SHRCG
Taiwan Semiconductor Corporation
RMB6SHRCG
Taiwan Semiconductor Corporation
LFXP3C-4T100C
Lattice Semiconductor Corporation
XC3S1600E-5FGG484C
Xilinx Inc.
A54SX72A-1FG256I
Microsemi Corporation
XC4020XL-09HT176C
Xilinx Inc.
EP3C55F484C6N
Intel
10M02SCE144C7G
Intel
5AGXMA3D4F27C4N
Intel
XC6VLX365T-L1FF1759I
Xilinx Inc.
LFE2M50SE-6F900I
Lattice Semiconductor Corporation
10AX115H2F34I1SG
Intel