Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ2010-G
Manufacturer Part Number | GBJ2010-G |
---|---|
Future Part Number | FT-GBJ2010-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ2010-G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1kV |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 1.05V @ 10A |
Current - Reverse Leakage @ Vr | 10µA @ 1000V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-SIP, GBJ |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ2010-G Weight | Contact Us |
Replacement Part Number | GBJ2010-G-FT |
SBR2A40BLP-13
Diodes Incorporated
LBS10-13
Diodes Incorporated
HDS10M-13
Diodes Incorporated
HDS20M-13
Diodes Incorporated
MSB10M-13
Diodes Incorporated
DFBR030U3LP-13
Diodes Incorporated
RDBF1510U-13
Diodes Incorporated
RDBF2510-13
Diodes Incorporated
RDBF310-13
Diodes Incorporated
DBF1510U-13
Diodes Incorporated
XC2S200E-6PQ208C
Xilinx Inc.
EP1K10TC100-3
Intel
5SGSMD8K3F40I4N
Intel
5SGXEA7H2F35C2
Intel
EP3SL340H1152I4LN
Intel
LFE2M70SE-6FN900C
Lattice Semiconductor Corporation
LCMXO1200E-4M132I
Lattice Semiconductor Corporation
5CGXFC9E6F31I7N
Intel
10AX115N3F45I2SGE2
Intel
EP2SGX60DF780C3N
Intel