Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQT1N80TF-WS
Manufacturer Part Number | FQT1N80TF-WS |
---|---|
Future Part Number | FT-FQT1N80TF-WS |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQT1N80TF-WS Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223-3 |
Package / Case | TO-261-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQT1N80TF-WS Weight | Contact Us |
Replacement Part Number | FQT1N80TF-WS-FT |
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